| 摘要 |
<p>Provided is a semiconductor substrate manufacturing method wherein adhesion of heavy metals such as Fe, Ni, Cr and Cu and adhesion of particles are eliminated and generation of liquid contamination is also eliminated. The semiconductor substrate manufacturing method includes a step of forming an oxide film over the entire surface of a semiconductor substrate; a step of coating an oxide film on the rear surface and the side surface of the semiconductor substrate with a resist film; a cleaning step of cleaning the semiconductor substrate; and a step of growing an epitaxial layer by vapor phase epitaxy on the front surface of the semiconductor substrate after the cleaning step. The cleaning step includes a treatment of removing the semiconductor substrate front surface oxide film by using buffered hydrofluoric acid added with a surfactant, a treatment of removing the semiconductor substrate rear surface resist film by sulfuric acid hydrogen peroxide cleaning without drying the semiconductor substrate, a treatment of cleaning the semiconductor substrate by SC-1 cleaning without drying the semiconductor substrate, and a treatment of drying the semiconductor substrate.</p> |
