| 摘要 |
PROBLEM TO BE SOLVED: To provide a transistor with high withstanding voltage; or provide a transistor with high yield; provide a transistor with less parasitic capacitance; or provide a semiconductor device having the transistor.SOLUTION: A semiconductor device has a semiconductor, a first conductor, a second conductor, a third conductor, a fourth conductor, a first insulator, a second insulator, a third insulator and a fourth insulator. The first conductor and the semiconductor have regions, respectively, which overlap each other. The second conductor and the third conductor have regions, respectively, which contact the semiconductor. The semiconductor has a region which contacts the second insulator. The fourth insulator has a first region and a second region, in which the first region is thicker than the second region and the first region has a region which contacts the second insulator and the second region has a region which contacts the third insulator. The fourth conductor and the second insulator have regions, respectively, which overlap each other across the fourth insulator.SELECTED DRAWING: Figure 1 |
