发明名称 INDUCTIVELY COUPLED PLASMA PROCESSING APPARATUS
摘要 PURPOSE: An inductively coupled plasma processing apparatus is provided to reduce a power loss due to an eddy current by decreasing an eddy current area in a support frame. CONSTITUTION: A chamber body(110) includes an opening unit. A substrate support stand(130) is installed in the chamber body and supports a substrate(10). A gas spray unit(150) sprays gas to a processing space(S). A dielectric assembly(200) includes a plurality of dielectrics. An antenna(400) forms an induction field in the processing space.
申请公布号 KR20120066185(A) 申请公布日期 2012.06.22
申请号 KR20100127402 申请日期 2010.12.14
申请人 WONIK IPS CO., LTD. 发明人 LEE, HYANG JOO;KIM, JIN HONG
分类号 H01L21/3065;H01L21/205 主分类号 H01L21/3065
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