发明名称 |
INDUCTIVELY COUPLED PLASMA PROCESSING APPARATUS |
摘要 |
PURPOSE: An inductively coupled plasma processing apparatus is provided to reduce a power loss due to an eddy current by decreasing an eddy current area in a support frame. CONSTITUTION: A chamber body(110) includes an opening unit. A substrate support stand(130) is installed in the chamber body and supports a substrate(10). A gas spray unit(150) sprays gas to a processing space(S). A dielectric assembly(200) includes a plurality of dielectrics. An antenna(400) forms an induction field in the processing space. |
申请公布号 |
KR20120066185(A) |
申请公布日期 |
2012.06.22 |
申请号 |
KR20100127402 |
申请日期 |
2010.12.14 |
申请人 |
WONIK IPS CO., LTD. |
发明人 |
LEE, HYANG JOO;KIM, JIN HONG |
分类号 |
H01L21/3065;H01L21/205 |
主分类号 |
H01L21/3065 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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