发明名称 |
Method and system for fracturing a pattern using charged particle beam lithography with multiple exposure passes having different dosages |
摘要 |
In the field of semiconductor production using charged particle beam lithography, a method and system for fracturing or mask data preparation or proximity effect correction is disclosed, wherein base dosages for a plurality of exposure passes are different from each other. Methods for manufacturing a reticle and manufacturing an integrated circuit are also disclosed, wherein a plurality of charged particle beam exposure passes are used, with base dosage levels being different for different exposure passes.
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申请公布号 |
US8221939(B2) |
申请公布日期 |
2012.07.17 |
申请号 |
US20090647452 |
申请日期 |
2009.12.26 |
申请人 |
ZABLE HAROLD ROBERT;FUJIMURA AKIRA;D2S, INC. |
发明人 |
ZABLE HAROLD ROBERT;FUJIMURA AKIRA |
分类号 |
G03F1/20;G03F1/36 |
主分类号 |
G03F1/20 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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