| 摘要 |
PROBLEM TO BE SOLVED: To provide a manufacturing method of a semiconductor device, capable of improving morphology of Al wiring and electro-migration even when a barrier metal is thin. SOLUTION: A SiO<SB>2</SB>interlayer film 13 (oxide film) is formed on a semiconductor substrate 11. A Ti film 18 is then formed on the SiO<SB>2</SB>interlayer film 13. A TiN film 32 is then formed on the Ti film 18. Al wiring 33 is formed on the TiN film. In a process to form the Ti film 18, a physical vapor phase epitaxy method is used under the atmosphere having a pressure of not more than 0.3 Pa. Thereby, a TiO<SB>2</SB>film 31 is formed between the Ti film 18 and the SiO<SB>2</SB>interlayer film 13. COPYRIGHT: (C)2009,JPO&INPIT
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