发明名称 Cap, semiconductor device including the cap, and manufacturing method therefor
摘要 A cap for installing a semiconductor device that can send or receive a light having a predetermined wavelength, the cap including a recess for installing the semiconductor device, the recess being defined by a through-hole penetrating an upper surface of a silicon substrate and a lower surface of the silicon substrate, the through-hole having an upper end part of the through-hole on a side of the upper surface of the silicon substrate and a lower end part of the through-hole on a side of the lower surface of the silicon substrate, and a coating film formed to cover the upper surface of the silicon substrate and the upper end part of the through-hole, wherein the coating film that covers the upper end part of the through-hole is a window part that transmits the light having a predetermined wavelength.
申请公布号 US9434604(B2) 申请公布日期 2016.09.06
申请号 US201514607260 申请日期 2015.01.28
申请人 SHINKO ELECTRIC INDUSTRIES CO., LTD. 发明人 Fujihara Kosuke;Sakaguchi Hideaki
分类号 B81B7/00;H01L31/0203;H01S5/022;H01L33/58 主分类号 B81B7/00
代理机构 IPUSA, PLLC 代理人 IPUSA, PLLC
主权项 1. A cap comprising: a through-hole penetrating an upper surface of a silicon substrate and a lower surface of the silicon substrate, the silicon substrate including an inner side surface exposed in the through-hole and an outer side surface located on an opposite side of the inner side surface, the through-hole including an upper end part of the through-hole located on a side of the upper surface of the silicon substrate and a lower end part of the through-hole located on a side of the lower surface of the silicon substrate; and a silicon dioxide film covering the upper surface of the silicon substrate, the lower surface of the silicon substrate, the inner side surface of the silicon substrate, the outer side surface of the silicon substrate, and the upper end part of the through-hole; wherein a part of the silicon dioxide film that covers the upper end part of the through-hole, a part of the silicon dioxide film that covers the upper surface of the silicon substrate, a part of the silicon dioxide film that covers the inner side surface of the silicon substrate, and a part of the silicon dioxide film that covers the outer side surface of the silicon substrate are integrally formed; wherein the lower end part of the through-hole is open; wherein the part of the silicon dioxide film that covers the upper end part of the through-hole and the part of the silicon dioxide film that covers the inner side surface of the silicon substrate define a recess; and wherein the part of the silicon dioxide coating film that covers the upper end part of the through-hole is a window part that transmits the light having a predetermined wavelength.
地址 Nagano JP