| 摘要 |
PROBLEM TO BE SOLVED: To provide a method for film deposition with high mass-productivity, by which the distribution and ununiformity of discharge depending on the shape of electrodes and frequency are relaxed, more uniform discharge is made possible, particularly, the uniformity in the directions (width direction and short- length direction) orthogonal to the moving direction of a substrate is improved, and the formation of a laminated type element of higher performance and uniform plasma of a larger area is made possible, and to provide a deposition film forming device. SOLUTION: This film deposition method by a plasma CVD method, in which a substrate 3 composed of a long-length beltlike member is continuously moved to one or plural deposition film forming furnaces 1 has discharge space and a film is deposited on the substrate 3, and electrodes 4 and 5 are introduced from confronted deposition film forming furnace walls 8 and 9 parallel to the moving direction of the beltlike member into the discharge space of one or plural deposition film forming furnaces alternately by the same pieces, and the electrodes are arranged parallelly in the same plane in the moving direction of the substrate.
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