发明名称 |
Nitride semiconductor light emitting device |
摘要 |
Provided is a nitride semiconductor light emitting device having enhanced output power and resistance to electrostatic discharge. The light emitting device comprises an n-side contact layer formed on a substrate, a current diffusion layer formed on the n-side contact layer, an active layer formed on the current diffusion layer, and a p-type clad layer formed on the active layer. The current diffusion layer is formed by alternately stacking at least one first InAlGaN layer having a higher electron concentration than that of the n-side contact layer and at least one second InAlGaN layer having a lower electron concentration than that of the n-side contact layer.
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申请公布号 |
US2006192207(A1) |
申请公布日期 |
2006.08.31 |
申请号 |
US20050247152 |
申请日期 |
2005.10.12 |
申请人 |
SAMSUNG ELECTRO-MECHANICS CO., LTD. |
发明人 |
WOOK SHIM HYUN;HAK WON JONG;SUB PARK JIN;SEO KANG JOONG;JIN LEE HYUN |
分类号 |
H01L33/04;H01L33/14;H01L33/32;H01L33/36 |
主分类号 |
H01L33/04 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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