| 摘要 |
PROBLEM TO BE SOLVED: To form carbon nanotube wiring which is applicable as the wiring for a semiconductor device. SOLUTION: The precursor (NiCl) of a catalyst metal component (Ni) and Cl<SB>2</SB>gas is adsorbed by a substrate 3, then the film forming reaction for forming Ni film by depositing Ni and the etching reaction for etching the Ni film formed by the film forming reaction with Cl<SB>2</SB>gas radical are made to coexist, an Ni film is formed only on the bottom surface of a recess in the substrate 3 by controlling the film forming reaction rate so that it is larger than the etching reaction rate, and predetermined wiring is formed by growing carbon nanotubes within the recess in the substrate 3 using the Ni whose film is formed only on the bottom surface of the recess as a catalyst metal. COPYRIGHT: (C)2007,JPO&INPIT |
