| 发明名称 |
THIN FILM TRANSISTOR ARRAY SUBSTRATE AND MANUFACTURING METHOD OF THE SAME |
| 摘要 |
Provided is a thin film transistor array substrate, including a gate electrode, a gate insulating layer covering the gate electrode, a semiconductor pattern formed on the gate insulating layer and including a channel region overlapping the gate electrode, a source electrode and a drain electrode formed on the semiconductor pattern and facing each other with a first opening exposing the channel region therebetween, a first protective layer formed on the gate insulating layer to cover the source electrode, the drain electrode and the semiconductor pattern and a metal oxide layer formed along a surface of the first protective layer. |
| 申请公布号 |
US2016197295(A1) |
申请公布日期 |
2016.07.07 |
| 申请号 |
US201514956058 |
申请日期 |
2015.12.01 |
| 申请人 |
SAMSUNG DISPLAY CO., LTD |
发明人 |
LEE Je-Hun |
| 分类号 |
H01L51/05;H01L29/786;H01L29/417;H01L29/49;H01L29/423;H01L27/12;H01L29/66 |
主分类号 |
H01L51/05 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A thin film transistor array substrate, comprising:
a gate electrode; a gate insulating layer covering the gate electrode; a semiconductor pattern formed on the gate insulating layer and including a channel region overlapping the gate electrode; a source electrode and a drain electrode formed on the semiconductor pattern and facing each other with a first opening exposing the channel region therebetween; a first protective layer formed on the gate insulating layer to cover the source electrode, the drain electrode and the semiconductor pattern; and a metal oxide layer formed along a surface of the first protective layer. |
| 地址 |
YONGIN-CITY KR |
