| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor thyristor device capable of avoiding a leakage current that is generated due to the potential of the other wiring layer in a relation of a wiring layout. SOLUTION: The semiconductor thyristor device includes: a semiconductor substrate; two transistors which are different in junction type and provided adjacent to each other in the semiconductor substrate to constitute one thyristor element; a first wiring layer that is formed on the semiconductor substrate, and provides ground potential to one of the transistors; and a second wiring layer that is formed on the semiconductor substrate, and provides power source potential to the other of the transistors. The first wiring layer covers a region in the semiconductor substrate in which the two transistors adjoin each other. COPYRIGHT: (C)2010,JPO&INPIT |
