Method to integrate a halide-containing ALD film on sensitive materials

摘要

Various embodiments herein relate to methods and apparatus for depositing a bilayer barrier layer on a substrate. The bilayer barrier layer may include a first sub-layer designed to protect underlying halide-sensitive layers from damaging halide-containing chemistry, as well as a second sub-layer designed to protect underlying materials from damage due to oxidation. In a number of embodiments the first sub-layer is layer having a high carbon content, and the second layer is silicon nitride. The silicon nitride second sub-layer may be deposited with halide-containing chemistry that would otherwise damage halide-sensitive materials, if not for the presence of the first sub-layer. The resulting bilayer barrier layer provides high quality protection for underlying materials.

主权项

1. A method of depositing a bilayer barrier layer on a partially fabricated semiconductor device, the method comprising:
(a) providing a substrate comprising a first layer of halide-sensitive material, the first layer of halide-sensitive material being at least partially exposed when provided in (a); and (b) depositing the bilayer barrier layer by:
(i) depositing a first sub-layer of the bilayer barrier layer on the substrate, the first sub-layer comprising at least about 40 weight % carbon, the first sub-layer of the bilayer barrier layer being deposited on exposed portions of the first layer of halide-sensitive material, and(ii) depositing a second sub-layer of the bilayer barrier layer on the first sub-layer of the bilayer barrier layer, the second sub-layer of the bilayer barrier layer comprising silicon nitride, wherein the second sub-layer of the bilayer barrier layer is deposited using halide-containing chemistry, wherein during deposition of the second sub-layer of the bilayer barrier layer, the first sub-layer of the bilayer barrier layer protects the first layer of halide-sensitive material from the halide-containing chemistry.