发明名称 INDIUM TARGET AND METHOD FOR MANUFACTURING SAME
摘要 Provided are an indium target capable of achieving a high deposition rate while suppressing the occurrence of arcing, and a method for manufacturing the indium target. In the process of solidification at the time of melting and casting an indium ingot, ultrasonic vibration is applied to molten indium liquid which is at least in a state immediately before solidification, and thereby, coarsening of the grain size is suppressed. Thus, an indium target is provided An indium target in which an overall average grain size is 10 mm or less; for the grains observed from a cross-section parallel to a thickness direction, a ratio of an average grain size in a direction parallel to the thickness direction with respect to an average grain size in a direction perpendicular to the thickness direction is 0.7 to 1.1; and pores with a pore size of 50 µm or greater exists at a density of 1 pore/cm 3 or less.
申请公布号 KR101202232(B1) 申请公布日期 2012.11.16
申请号 KR20127013157 申请日期 2011.05.20
申请人 发明人
分类号 C23C14/34;C22C28/00 主分类号 C23C14/34
代理机构 代理人
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