| 摘要 |
<P>PROBLEM TO BE SOLVED: To reduce the scattering of flatness or the in-plane dispersion of epitaxial thickness to a specified level or lower when the epitaxially grown layer turns out to be thick, and to completely remove foreign matters produced during the epitaxial growth step without an increase in man-hours or costs. <P>SOLUTION: An epitaxially grown film formation step is followed by an epitaxially grown surface polishing step, and this results in an epitaxially grown surface 10a with its flatness after polishing better than that formed by the conventional method. Foreign matters produced in the epitaxial growth step are removed when the epitaxially grown surface 10a is polished in the epitaxially grown surface polishing step after the epitaxial growth step. Furthermore, by polishing both surfaces with neither of the two surfaces fixed immovable, the in-plane irregularities of the surface 10a may be eased by the in-plane irregularities of the rear surface 10b, and, as the result, the epitaxially grown surface 10a is improved in terms of flatness and in-plane thickness dispersion. <P>COPYRIGHT: (C)2005,JPO&NCIPI |
