| 摘要 |
PURPOSE:To make plasma distribution among electrodes even by a method wherein the surfaces of peripheral electrode parts provided on a specimen base of lower electrode opposing to a parallel flat electrode are flattened. CONSTITUTION:The electrode 1 of a plasma etching device provided with a lower electrode 1 and an upper electrode 2 constituting a parallel flat plate electrode is composed of a central disc type specimen base 3 and doughnut type peripheral electrode parts 4 positioned around the base 3. Next, the electrodes 1, 2 are supplied with power from a high-frequency power supply 7 to produce plasma while leading reactive gas into a chamber 6 through a gas leading-in pipe 6. Through these procedures, the surfaces of peripheral electrode parts 4 opposing to the upper electrode 2 is not formed of any throughholes for exhausting gas to be flattened for even plasma distribution.
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