Connection device for integrated circuit

摘要

The device (1) has active transistors (N1, P1) e.g. N and P-type metal-oxide-semiconductor active transistors, mounted in series between a supply voltage (V-DD) and a ground (V-SS). A switching unit (3) modifies an amplitude level of voltage signals (V-esd) applied to gates of active transistors without exceeding a highest voltage of the supply voltage or an internal regulated voltage (V-REG), so as to adapt a voltage domain of an integrated circuit to an external component connected to an external contact pad (2).