Semiconductor device having super junction metal oxide semiconductor structure and fabrication method for the same

摘要

A semiconductor device includes: a first base layer; a drain layer disposed on the back side surface of the first base layer; a second base layer formed on the surface of the first base layer; a source layer formed on the surface of the second base layer; a gate insulating film disposed on the surface of both the source layer and the second base layer; a gate electrode disposed on the gate insulating film; a column layer formed in the first base layer of the lower part of both the second base layer and the source layer by opposing the drain layer; a drain electrode disposed in the drain layer; and a source electrode disposed on both the source layer and the second base layer, wherein heavy particle irradiation is performed to the column layer to form a trap level locally.

主权项

1. A semiconductor device comprising:
a first base layer of a first conductivity type; a drain layer of the first conductivity type formed on a back side surface of the first base layer; a second base layer of a second conductivity type formed in a surface side of the first base layer; a source layer of the first conductivity type formed in a surface side of the second base layer; a gate insulating film disposed on a surface of both the source layer and the second base layer; a gate electrode disposed on the gate insulating film; a column layer of the second conductivity type formed in the first base layer below both the second base layer and the source layer by opposing the drain layer, the column layer extending in a first direction vertical to a principal surface of the drain layer, a length of the column layer in the first direction being larger than a length thereof in a second direction that is parallel to the principal surface of the drain layer; a drain electrode disposed in the drain layer; and a source electrode disposed on both the source layer and the second base layer, wherein a trap level is locally formed below the second base layer such that an attenuation peak position of a heavy particle irradiation is included between a bottom surface of the column layer and a top surface of the drain layer, each of the column layer and the first base layer having a portion of the trap level formed therein.