METHOD OF FORMING FIELD EFFECT TRANSISTORS (FETS) WITH ABRUPT JUNCTIONS AND INTEGRATED CIRCUIT CHIPS WITH THE FETS

摘要

A method of forming field effect transistors (FETs) and on Integrated Circuit (IC) chips with the FETs. Channel placeholders at FET locations are undercut at each end of FET channels. Source/drain regions adjacent to each channel placeholder extend into and fill the undercut. The channel placeholder is opened to expose channel surface under each channel placeholder. Source/drain extensions are formed under each channel placeholder, adjacent to each source/drain region. After removing the channel placeholders metal gates are formed over each said FET channel.

主权项

1. A method of forming field effect transistors (FETs), said method comprising:
forming channel placeholders on a semiconductor surface; undercutting each channel placeholder at each end of a respective FET channel; forming a source/drain region adjacent to said each channel placeholder at said each end, each said source/drain region extending into and filling the undercut; exposing said semiconductor surface under said channel placeholders through said each channel placeholder, the surface being exposed to said each source/drain region; forming source/drain extensions on the exposed said semiconductor surface under said each channel placeholder to said each source/drain region; removing said channel placeholders; and forming a metal gate over each said FET channel.