| 摘要 |
<p>The method of manufacturing the semiconductor device is provided to prevent the attack of the passing gate in the ion injection process of the high concentration and the annealing process of the high temperature when forming the dual-poly gate at the recessed gate structure. The hard mask film pattern exposing the gate reserved area is formed on the semiconductor substrate(10) including the element isolation film(14) for defining the active area(12). The semiconductor substrate is etched by using the hard mask film pattern as the mask. The recess is formed. The gate poly-silicon layer is formed on the gate reserved area. The gate electrode layer and gate hard mask layer are formed on the gate reserved area. The hard mask film pattern is removed.</p> |
