| 发明名称 |
INTEGRATED CIRCUIT WITH HYDROGEN ABSORPTION STRUCTURE |
| 摘要 |
An integrated circuit such as a NAND flash memory includes a dielectric layer overlying transistors (e.g. NAND flash memory cells) that are formed along a surface of a substrate and a hydrogen absorption structure overlying the dielectric layer, the hydrogen absorption structure extending over the transistors, the hydrogen absorption structure being electrically isolated from the transistors. |
| 申请公布号 |
US2016315091(A1) |
申请公布日期 |
2016.10.27 |
| 申请号 |
US201514695426 |
申请日期 |
2015.04.24 |
| 申请人 |
SanDisk Technologies, Inc. |
发明人 |
Okuyama Arata;Urakawa Ryo;Omi Hiroshi |
| 分类号 |
H01L27/115;H01L27/105 |
主分类号 |
H01L27/115 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. An integrated circuit comprising:
a substrate; a plurality of floating gate transistors formed along a surface of the substrate; a dielectric layer overlying the plurality of transistors; and a hydrogen absorption structure overlying the dielectric layer, the hydrogen absorption structure extending over the plurality of floating gate transistors, the hydrogen absorption structure being electrically isolated from the plurality of transistors. |
| 地址 |
Plano TX US |
