发明名称 POSITIVE RESIST COMPOSITION AND PATTERN FORMING METHOD USING THE SAME
摘要 <P>PROBLEM TO BE SOLVED: To provide a positive resist composition excellent in line edge roughness and superior also in focus latitude and dependence on density distribution, and to provide a pattern forming method that uses the same. <P>SOLUTION: The positive resist composition contains (A) a resin which degrades under the action of acid, to increase solubility in an alkali developer and (B) a compound represented by Formula (I), wherein the resin (A) comprises a first repeating unit (A1) which degrades under the action of an acid to produce an alkali-soluble group and a second repeating unit (A2) which is different from the first repeating unit (A1) and degrades under the action of an acid to produce an alkali-soluble group, and the first repeating unit (A1) and the second repeating unit (A2) are selected from repeating units represented by Formula (Ia) and Formula (Ib). In the Formula (I), R<SB>1</SB>represents H, alkyl or cycloalkyl; X represents H, alkyl, cycloalkyl or the like; and R<SB>2</SB>-R<SB>5</SB>, each independently represents H, cyano, nitro, halogen or the like. In the Formulae (Ia) and (Ib), X<SB>1</SB>represents H or alkyl; A represents a single bond or a divalent linking group; R<SB>11</SB>represents alkyl; Z represents a group of atoms, required to form cycloalkyl in combination with C; and R<SB>12</SB>-R<SB>14</SB>, each independently represent alkyl or cycloalkyl. <P>COPYRIGHT: (C)2007,JPO&INPIT
申请公布号 JP2007240631(A) 申请公布日期 2007.09.20
申请号 JP20060059756 申请日期 2006.03.06
申请人 FUJIFILM CORP 发明人 TSUBAKI HIDEAKI
分类号 G03F7/039;C08F220/10;G03F7/004;H01L21/027 主分类号 G03F7/039
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