发明名称 CMOS imaging array with improved noise characteristics
摘要 A pixel cell and imaging arrays using the same are disclosed. The pixel cell includes a photodiode that is connected to a floating diffusion node by a transfer gate that couples the photodiode to the floating diffusion node in response to a first gate signal. A shielding electrode shields the floating diffusion node from the first gate signal. An output stage generates a signal related to a charge on the floating diffusion node. In one aspect of the invention, the photodiode is connected to the floating diffusion node by a buried channel, and the shielding electrode includes an electrode overlying the channel and positioned between the transfer gate and the floating diffusion node. The shielding electrode is held at a potential that prevents charge from accumulating under the shielding electrode when the floating diffusion is at the second potential.
申请公布号 US9426390(B2) 申请公布日期 2016.08.23
申请号 US201012717609 申请日期 2010.03.04
申请人 BAE Systems Imaging Solutions Inc. 发明人 Fowler Boyd
分类号 H04N5/335;H01L27/146 主分类号 H04N5/335
代理机构 代理人 Ward Calvin B.
主权项 1. A pixel cell comprising: a photodiode; a floating diffusion node; a transfer gate that couples said photodiode to said floating diffusion node in response to a first gate signal; a shielding electrode that shields said floating diffusion node from said first gate signal; and an output stage that generates a signal related to a charge on said floating diffusion node, said shielding electrode being held at a constant potential while said transfer gate couples said photodiode to said floating diffusion node.
地址 San Jose CA US