| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor wafer manufacturing method and a semiconductor device manufacturing method, which use a generator of a metal chloride gas, capable of achieving improvement in stability of a concentration of the metal chloride gas and improvement of responsibility to a change in concentration of the metal chloride gas.SOLUTION: The semiconductor wafer manufacturing method comprises a process of forming on a substrate, a semiconductor film doped with an impurity. In the process of forming the semiconductor film, a gas passage for a gas flowing through a raw material container is formed to have a full route with bent parts, which extends from a gas supply port to a gas exhaust port by partitioning a space above a metal material in the raw material container by a partition plate, and by making a passage width of the gas passage in a horizontal direction be not more than 5 cm, and a transition time from the start of a concentration change of the metal chloride-containing gas until vanishing of the concentration of the metal chloride-containing gas exhausted from the gas exhaust port becomes shorter than a delay time from stoppage of supply of the chlorine-containing gas to the raw material container until the start of a change in concentration of a metal chloride-containing gas exhausted from the gas exhaust port. |
