THIN FILM TRANSISTOR UTILIZED IN ARRAY SUBSTRATE AND MANUFACTURING METHOD THEREOF

摘要

A method for manufacturing a thin film transistor (TFT) which includes a gate, a gate insulation layer, a channel layer, an etching stopping layer, a source, and a drain. The gate is formed on a substrate. The gate insulation layer covers the gate and the substrate. The channel layer is formed on the gate insulation layer to correspond with the gate. The etching stopping layer is formed on a surface of the channel layer. The channel layer and the etching stopping layer are formed in a same photo etching process.

主权项

1. A method for manufacturing a thin film transistor (TFT) comprising:
forming a gate on a substrate; forming a gate insulation layer on the substrate to cover the gate; forming a semiconductor layer and a barrier layer on the gate insulation layer; forming a patterned photoresist layer in a pattern on the gate insulation layer, the patterned photoresist layer comprising a first portion and at least two second portions coupled at opposite sides of the first portion on the gate insulation layer, wherein a thickness of the first portion is different from a thickness of each second portion; etching the barrier layer and the semiconductor layer to remove a portion of the barrier layer not covered by the patterned photoresist layer and a portion of the semiconductor layer not covered by the patterned photoresist layer to form a channel layer under the barrier layer; removing the at least two second portions of the patterned photoresist layer to expose a portion of the barrier layer; and removing a portion of the exposed barrier layer corresponding to the removed at least two second portions to form an etching stopping layer, and expose a portion of the channel layer; removing the first portion of the patterned photoresist layer; and forming a source and drain coupled at opposite sides of the channel layer: wherein the etching stopping layer is formed on a surface of the channel layer adjacent to the source and drain to separate the source and the drain from each other, the channel layer comprises two first sides, each first side located opposite each other, and two second sides, each second side located opposite each other; wherein each first side connects between the two opposite second sides; wherein the first sides respectively extend to the source and the drain to couple with the source and the drain; and wherein the first sides are not covered by the etching stopping layer, and the second sides are covered by the etching stopping layer; and a space is defined between each of the second sides and a corresponding edge of the etching stopping layer.