TUNNEL TRANSISTOR, LOGICAL GATE COMPRISING TRANSISTOR, STATIC RANDOM-ACCESS MEMORY USING LOGICAL GATE, AND METHOD FOR MAKING SUCH TUNNEL TRANSISTOR

摘要

PROBLEM TO BE SOLVED: To provide a tunnel transistor which comprises a first gate and a second gate and can be used with smaller difference in voltages between the first gate and the second gate.

SOLUTION: A tunnel transistor 1 comprises: a drain 2; a source 4; and at least a first gate 6 for controlling current between the drain 2 and the source 4. A first side 9 of a first gate dielectric material 7 and a first side 13 of a second gate dielectric material 11 are positioned substantially along and substantially in contact with a first semiconductor part 14 and a second semiconductor part 15, respectively.

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