发明名称 Atomic layer deposition encapsulation for acoustic wave devices
摘要 Acoustic wave devices and methods of coating a protective film of alumina (Al2O3) on the acoustic wave devices are disclosed herein. The protective film is applied through an atomic layer deposition (ALD) process. The ALD process can deposit very thin layers of alumina on the surface of the acoustic wave devices in a precisely controlled manner. Thus, the uniform film does not significantly distort the operation of the acoustic wave device.
申请公布号 US8440012(B2) 申请公布日期 2013.05.14
申请号 US201113232319 申请日期 2011.09.14
申请人 HATCHER, JR. MERRILL ALBERT;RAO JAYANTI JAGANATHA;SIOMKOS JOHN ROBERT;RF MICRO DEVICES, INC. 发明人 HATCHER, JR. MERRILL ALBERT;RAO JAYANTI JAGANATHA;SIOMKOS JOHN ROBERT
分类号 C09D1/00;C09K17/40;H01L41/09;H03H9/25 主分类号 C09D1/00
代理机构 代理人
主权项
地址