| 发明名称 | Dicing method | ||
| 摘要 | The method comprises providing a substrate like a semiconductor wafer (1), applying a laser cut (4) of the substrate, and subsequently applying a saw to divide the substrate from a main surface (10). The laser cut (4) may be used to cut along boundaries of saw streets (7). | ||
| 申请公布号 | US9421640(B2) | 申请公布日期 | 2016.08.23 |
| 申请号 | US201414764962 | 申请日期 | 2014.01.21 |
| 申请人 | AMS AG | 发明人 | Draxler Walter |
| 分类号 | H01L21/00;B28D5/02;B23K26/40;B81C1/00;C03B33/02;H01L21/78 | 主分类号 | H01L21/00 |
| 代理机构 | McDermott Will & Emery LLP | 代理人 | McDermott Will & Emery LLP |
| 主权项 | 1. A dicing method, comprising: providing a semiconductor wafer as a substrate; applying a saw to divide the substrate from a main surface; performing a laser cut of the substrate before the saw is applied; and directing the laser cut to a partial volume of the substrate opposite the main surface, the partial volume including a layer of integrated components. | ||
| 地址 | Unterpremstaetten AT | ||