| 发明名称 |
SELF-ALIGNED PROCESS USING VARIABLE-FLUIDITY MATERIAL |
| 摘要 |
A method of forming a wide line includes forming a portion of variable-fluidity material between opposing inner walls of a pair of adjacent line portions, the portion of variable-fluidity material patterned to have a lateral dimension that is smaller than a distance between the opposing inner walls of the pair of adjacent line portions, and subsequently applying process conditions that increase the fluidity of the portion of variable-fluidity material sufficiently to cause the portion of variable-fluidity material to extend to the opposing inner walls of the pair of adjacent line portions. |
| 申请公布号 |
US2016247674(A1) |
申请公布日期 |
2016.08.25 |
| 申请号 |
US201514626652 |
申请日期 |
2015.02.19 |
| 申请人 |
SanDisk Technologies Inc. |
发明人 |
Tobioka Akihiro |
| 分类号 |
H01L21/027;H01L21/266;H01L21/3213;H01L27/115;H01L21/02;H01L21/768;H01L21/311 |
主分类号 |
H01L21/027 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A method of forming a semiconductor device that includes narrow lines and wide lines, the method comprising:
forming a plurality of line portions arranged on a first layer, a pair of adjacent line portions arranged at a position where a wide line is to be formed; forming a portion of variable-fluidity material between opposing inner walls of the pair of adjacent line portions, the portion of variable-fluidity material patterned to have a lateral dimension that is smaller than a distance between the opposing inner walls of the pair of adjacent line portions; and subsequently applying process conditions that increase the fluidity of the portion of variable-fluidity material sufficiently to cause the portion of variable-fluidity material to extend to the opposing inner walls of the pair of adjacent line portions. |
| 地址 |
Plano TX US |
