| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a radar system which can detect a failure mode peculiar to a high-electron mobility transistor. <P>SOLUTION: A control circuit 31 controls a gate voltage switching portion 51 so that the gate voltage Vg applied to the transistor T1 may become a given checking voltage V2. The checking voltage V2 may be set to a pinch-off-voltage Vp of the transistor T1, for example. The control circuit 31 detects a current value of the drain current Id when the checking voltage V2 is applied, thereby determining a failure of the transistor T1 based on the current value. Since the failure determination is made on the basis of the drain current value of the drain current Id when the checking voltage set up apart from an operating voltage V1 is applied as the gate voltage Vg, the failure mode peculiar to the high electron mobility transistor and difficult to be detected in an ordinary operating state becomes detectable. <P>COPYRIGHT: (C)2008,JPO&INPIT</p> |
