发明名称 |
Method for fabricating a strained structure |
摘要 |
A structure for a field effect transistor on a substrate that includes a gate stack, an isolation structure and a source/drain (S/D) recess cavity below the top surface of the substrate disposed between the gate stack and the isolation structure. The recess cavity having a lower portion and an upper portion. The lower portion having a first strained layer and a first dielectric film. The first strained layer disposed between the isolation structure and the first dielectric film. A thickness of the first dielectric film less than a thickness of the first strained layer. The upper portion having a second strained layer overlying the first strained layer and first dielectric film.
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申请公布号 |
US8497528(B2) |
申请公布日期 |
2013.07.30 |
申请号 |
US20100775006 |
申请日期 |
2010.05.06 |
申请人 |
LEE TSUNG-LIN;CHANG CHIH-HAO;KO CHIH-HSIN;YUAN FENG;XU JEFF J.;TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. |
发明人 |
LEE TSUNG-LIN;CHANG CHIH-HAO;KO CHIH-HSIN;YUAN FENG;XU JEFF J. |
分类号 |
H01L29/66 |
主分类号 |
H01L29/66 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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