SCHOTTKY DIODE FOR SUB-MICRO IC AND METHOD OF MAKING THE SAME

摘要

A Schottky diode for sub-micro IC and method of making the same are provided. The Schottky diode comprises a substrate, a semiconductor layer (17), a metal-oxide-semiconductor gate dielectric layer (11), a barrier layer (31), a metal-oxide-semiconductor gate (14), and a wiring interconnection (51), wherein the gate dielectric layer (11), the barrier layer (31) and the wiring interconnection (51) are sequentialy laminated on the substrate. The barrier layer (31) is positioned between the gate dielectric layer (11) and the wiring interconnection (51). The wiring interconnection (51) directly contact the semiconductor layer (17), and there is no barrier layer (31) exiting between them. The Schottky diode and the method of making same same can meet the requirements of metal-oxide-semiconductor process and be suitable for integrated production of sub-micro IC also.