| 摘要 |
PROBLEM TO BE SOLVED: To provide a low-cost high performance semiconductor device and a method for manufacturing the semiconductor device. SOLUTION: A first region having a single-crystal semiconductor layer left by performing heat treatment after implanting ions into a single-crystal semiconductor and sticking it on a substrate, and a second region having a non-single-crystal semiconductor layer are provided over the substrate. Further, it is preferable that a cleavage crystal semiconductor layer is irradiated with laser light in an inert atmosphere and the non-single-crystal semiconductor layer is irradiated with laser light at least once in an air atmosphere. COPYRIGHT: (C)2009,JPO&INPIT |
