发明名称 |
METHOD OF MANUFACTURING SEMICONDUCTOR SUBSTRATE |
摘要 |
PROBLEM TO BE SOLVED: To provide a method of manufacturing a semiconductor substrate capable of reducing the manufacturing costs of the semiconductor substrate. SOLUTION: The manufacturing method of a semiconductor substrate related to a first aspect includes: a preparation process for preparing a base substrate formed of Cr; and a nitriding process for nitriding a (110) plane of the base substrate to form a (111) plane of a chromium nitride layer. COPYRIGHT: (C)2008,JPO&INPIT
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申请公布号 |
JP2008091730(A) |
申请公布日期 |
2008.04.17 |
申请号 |
JP20060272325 |
申请日期 |
2006.10.03 |
申请人 |
TOHOKU TECHNO ARCH CO LTD;FURUKAWA CO LTD;MITSUBISHI CHEMICALS CORP;DOWA ELECTRONICS MATERIALS CO LTD;EPIVALLEY CO LTD |
发明人 |
YAO TAKAFUMI;CHIYO MEIKAN |
分类号 |
H01L21/205;H01L21/20 |
主分类号 |
H01L21/205 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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