发明名称 METHOD OF MANUFACTURING SEMICONDUCTOR SUBSTRATE
摘要 PROBLEM TO BE SOLVED: To provide a method of manufacturing a semiconductor substrate capable of reducing the manufacturing costs of the semiconductor substrate. SOLUTION: The manufacturing method of a semiconductor substrate related to a first aspect includes: a preparation process for preparing a base substrate formed of Cr; and a nitriding process for nitriding a (110) plane of the base substrate to form a (111) plane of a chromium nitride layer. COPYRIGHT: (C)2008,JPO&INPIT
申请公布号 JP2008091730(A) 申请公布日期 2008.04.17
申请号 JP20060272325 申请日期 2006.10.03
申请人 TOHOKU TECHNO ARCH CO LTD;FURUKAWA CO LTD;MITSUBISHI CHEMICALS CORP;DOWA ELECTRONICS MATERIALS CO LTD;EPIVALLEY CO LTD 发明人 YAO TAKAFUMI;CHIYO MEIKAN
分类号 H01L21/205;H01L21/20 主分类号 H01L21/205
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