| 摘要 |
PURPOSE: A semiconductor memory device is provided to speed up the data read operation and to reduce the power consumption by keeping the power supply voltage level being supplied to an input/output sense amplifier(IOSA) higher than other part of the circuit. CONSTITUTION: A semiconductor memory device having a data read path of a memory call, comprises the first multiplexer(MUX)(10), an input/output sense amplifier(IOSA)(20), the second multiplexer(30), an output buffer circuit(40), and output driver circuit(50), the first internal voltage circuit(70), the second internal voltage circuit(80) for generating an increased internal voltage(IVC+Va), and a coupling capacitor(Cc). Wherein, the increased internal voltage(IVC+Va) is applied to the IOSA.
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