发明名称 METHODS OF FORMING PATTERNS
摘要 Methods of forming patterns includes guide patterns on a neutral layer. A self-assembling block copolymer (BCP) layer on the guide patterns and the neutral layer. By annealing the self-assembling BCP layer, first polymer block domains and second polymer block domains are formed The guide patterns are formed of a developable antireflective material. The neutral layer is formed of a cross-linked polymeric material.
申请公布号 US2016238938(A1) 申请公布日期 2016.08.18
申请号 US201615137819 申请日期 2016.04.25
申请人 SK hynix Inc. 发明人 BAN Keun Do;BOK Cheol Kyu;HEO Jung Gun;KIM Hong Ik
分类号 G03F7/16;G03F7/32;G03F7/20 主分类号 G03F7/16
代理机构 代理人
主权项 1. A method of forming patterns, the method comprising: forming a neutral layer on an underlying layer; forming a developable antireflective layer on the neutral layer; forming a photoresist layer on the developable antireflective layer; selectively exposing portions of the photoresist layer and portions of the developable antireflective layer to light; selectively removing, non-exposed portions of the photoresist layer to form a photoresist pattern exposing non-exposed portions of the developable antireflective layer; selectively removing the exposed portions of the developable antireflective layer to form guide patterns exposing portions of the neutral layer; forming a self-assembling block copolymer (BCP) layer on the guide patterns and the exposed neutral layer; and annealing the self-assembling BCP layer to form first polymer block domains and second polymer block domains, which are alternately and repeatedly arrayed.
地址 Gyeonggi-do KR