发明名称 |
METHODS OF FORMING PATTERNS |
摘要 |
Methods of forming patterns includes guide patterns on a neutral layer. A self-assembling block copolymer (BCP) layer on the guide patterns and the neutral layer. By annealing the self-assembling BCP layer, first polymer block domains and second polymer block domains are formed The guide patterns are formed of a developable antireflective material. The neutral layer is formed of a cross-linked polymeric material. |
申请公布号 |
US2016238938(A1) |
申请公布日期 |
2016.08.18 |
申请号 |
US201615137819 |
申请日期 |
2016.04.25 |
申请人 |
SK hynix Inc. |
发明人 |
BAN Keun Do;BOK Cheol Kyu;HEO Jung Gun;KIM Hong Ik |
分类号 |
G03F7/16;G03F7/32;G03F7/20 |
主分类号 |
G03F7/16 |
代理机构 |
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代理人 |
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主权项 |
1. A method of forming patterns, the method comprising:
forming a neutral layer on an underlying layer; forming a developable antireflective layer on the neutral layer; forming a photoresist layer on the developable antireflective layer; selectively exposing portions of the photoresist layer and portions of the developable antireflective layer to light; selectively removing, non-exposed portions of the photoresist layer to form a photoresist pattern exposing non-exposed portions of the developable antireflective layer; selectively removing the exposed portions of the developable antireflective layer to form guide patterns exposing portions of the neutral layer; forming a self-assembling block copolymer (BCP) layer on the guide patterns and the exposed neutral layer; and annealing the self-assembling BCP layer to form first polymer block domains and second polymer block domains, which are alternately and repeatedly arrayed. |
地址 |
Gyeonggi-do KR |