发明名称 METHODS OF FORMING PLURALITIES OF CAPACITORS
摘要 <p>The invention includes methods of forming pluralities of capacitors. In one implementation, a method of forming a plurality of capacitors includes providing a plurality of capacitor electrodes within a capacitor array area over a substrate. The capacitor electrodes comprise outer lateral sidewalls. The plurality of capacitor electrodes is supported at least in part with a retaining structure which engages the outer lateral sidewalls. The retaining structure is formed at least in part by etching a layer of material which is not masked anywhere within the capacitor array area to form said retaining structure. The plurality of capacitor electrodes is incorporated into a plurality of capacitors. Other aspects and implementations are contemplated.</p>
申请公布号 EP1859476(A1) 申请公布日期 2007.11.28
申请号 EP20060736182 申请日期 2006.02.27
申请人 MICRON TECHNOLOGY, INC. 发明人 SANDHU, GURTEJ, S.;DURCAN, MARK, D.
分类号 H01L21/02;H01L27/08;H01L27/10;H01L29/92;H01L49/02 主分类号 H01L21/02
代理机构 代理人
主权项
地址
您可能感兴趣的专利