| 发明名称 |
CMOS IMAGE SENSOR |
| 摘要 |
According to one embodiment, a CMOS image sensor includes a photoelectric conversion element and an amplifier transistor. The photoelectric conversion element converts incident light into an electric signal. The amplifier transistor has a heterojunction in which a Ge layer and an SiGeSn layer are joined together, as a channel region and amplifies the electric signal resulting from conversion by the photoelectric conversion element. |
| 申请公布号 |
US2016197116(A1) |
申请公布日期 |
2016.07.07 |
| 申请号 |
US201615066737 |
申请日期 |
2016.03.10 |
| 申请人 |
KABUSHIKI KAISHA TOSHIBA |
发明人 |
IKEDA Keiji;Tezuka Tsutomu |
| 分类号 |
H01L27/146;H01L31/028 |
主分类号 |
H01L27/146 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A CMOS image sensor comprising:
a photoelectric conversion element configured to convert incident light into an electric signal; and an amplifier transistor which has a heterojunction in which a Ge layer and an SiGeSn layer are joined together, as a channel region and amplifies the electric signal resulting from conversion by the photoelectric conversion element. |
| 地址 |
Tokyo JP |
