发明名称 SOLID-STATE IMAGING DEVICE AND MANUFACTURING METHOD OF THE SAME, AND ELECTRONIC APPARATUS
摘要 There is provided a solid-state imaging device including: an imaging pixel including a photoelectric conversion unit which receives incident light; and a phase difference detection pixel including the photoelectric conversion unit and a light shielding unit which shields some of the light incident to the photoelectric conversion unit, in which the imaging pixel further includes a high refractive index film which is formed on the upper side of the photoelectric conversion unit, and the phase difference detection pixel further includes a low refractive index film which is formed on the upper side of the photoelectric conversion unit.
申请公布号 US2016276398(A1) 申请公布日期 2016.09.22
申请号 US201615169992 申请日期 2016.06.01
申请人 Sony Corporation 发明人 Seki Yuichi;Inoue Toshinori;Sayama Yukihiro;Nakamoto Yuka
分类号 H01L27/146;H04N5/341 主分类号 H01L27/146
代理机构 代理人
主权项 1. An imaging device comprising: an imaging pixel including a first photoelectric conversion unit that receives incident light; a phase difference detection pixel including a second photoelectric conversion unit that receives incident light; a light shielding member that shields the photoelectric conversion unit of the phase difference detection pixel from some light incident on the phase difference detection pixel; a flattening film formed on an upper side of the imaging pixel, the phase difference detection pixel, and light shielding member; and a color filter layer formed on a first surface of the flattening film, wherein the color filter layer includes a first color filter located on the first photoelectric conversion unit and a second color filter located on the second photoelectric conversion unit, and wherein the second color filter is thinner than the first color filter.
地址 Tokyo JP