发明名称 |
SOLID-STATE IMAGING DEVICE AND MANUFACTURING METHOD OF THE SAME, AND ELECTRONIC APPARATUS |
摘要 |
There is provided a solid-state imaging device including: an imaging pixel including a photoelectric conversion unit which receives incident light; and a phase difference detection pixel including the photoelectric conversion unit and a light shielding unit which shields some of the light incident to the photoelectric conversion unit, in which the imaging pixel further includes a high refractive index film which is formed on the upper side of the photoelectric conversion unit, and the phase difference detection pixel further includes a low refractive index film which is formed on the upper side of the photoelectric conversion unit. |
申请公布号 |
US2016276398(A1) |
申请公布日期 |
2016.09.22 |
申请号 |
US201615169992 |
申请日期 |
2016.06.01 |
申请人 |
Sony Corporation |
发明人 |
Seki Yuichi;Inoue Toshinori;Sayama Yukihiro;Nakamoto Yuka |
分类号 |
H01L27/146;H04N5/341 |
主分类号 |
H01L27/146 |
代理机构 |
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代理人 |
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主权项 |
1. An imaging device comprising:
an imaging pixel including a first photoelectric conversion unit that receives incident light; a phase difference detection pixel including a second photoelectric conversion unit that receives incident light; a light shielding member that shields the photoelectric conversion unit of the phase difference detection pixel from some light incident on the phase difference detection pixel; a flattening film formed on an upper side of the imaging pixel, the phase difference detection pixel, and light shielding member; and a color filter layer formed on a first surface of the flattening film, wherein the color filter layer includes a first color filter located on the first photoelectric conversion unit and a second color filter located on the second photoelectric conversion unit, and wherein the second color filter is thinner than the first color filter. |
地址 |
Tokyo JP |