Semiconductor type physical quantity sensor

摘要

A diffusion gauge is formed in a surface of a silicon substrate which has a plane orientation of (110). The diffusion gauge is disposed so that a main current thereof flows along a <110> direction perpendicular to a direction in which large stress biased in one direction generates in the surface of the silicon substrate due to distortion of a base for fixing the silicon substrate. Therefore, even when the large biased stress generates in the surface of the silicon substrate, because the <110> direction in which the main current of the diffusion gauge flows is perpendicular to the direction in which the biased stress generates, there is a little change in a resistance value of the diffusion gauge. As a result, a detection error caused by the distortion of the base can be reduced.