| 摘要 |
PROBLEM TO BE SOLVED: To provide a manufacturing method of a semiconductor device capable of local temperature control while effectively activating impurities. SOLUTION: After a recess 8 is selectively formed on a surface of an optical absorption film 10, light is irradiated to the film 10 for heat treatment. A time period of the heat treatment is 1 second or shorter, for example. The heat treatment activates the impurities in an extension layer 5 and a pocket layer 6, but little heat dissipation occurs because the treatment continues for a short time. Since the surface of the optical absorption film 10 is flat in a low-temperature annealing region 51, the light reflected by the surface of the film 10 does not come again toward the film 10. On the other hand, in a high-temperature annealing region 52, the light irradiated inside the recess 8 is irradiated to the plane of the recess 8 a plurality of times with high probability, and then emitted outside. Therefore, a ratio absorbed by the optical absorption film 10 is remarkably higher than in the low-temperature annealing region 51. COPYRIGHT: (C)2008,JPO&INPIT
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