发明名称 DEVICE FOR MONITORING THICKNESS OF DEPOSITED FILM INSIDE REACTOR AND DRY PROCESSING METHOD
摘要 PROBLEM TO BE SOLVED: To realize a monitoring device capable of monitoring not only the thickness but also surface state of a deposited film formed on the inner wall of a reactor, separating them from each other. SOLUTION: A pattern composed of a total reflection part 15 and a light transmission part is formed on the inner surface 2a of a measurement window 2 provided to a reactor 1, and a measuring light radiates under conditions that light is totally reflected from the surface 2a when a deposited film 11 is not formed. When the deposited film 11 is formed on the surface 2a, a difference between a part of the measuring light reflected from the surface 11a of the deposited film 11 passing through the surface 2a and the other part of the measuring light reflected from the total reflection part 15 is measured so as to detect the thickness of the deposited film 11. The light volume of light reflected from the surface 11a of the deposited film 11 is compared with that of light from the smooth surface 11a to evaluate the roughness of the surface 11a. Therefore, the thickness and surface state of a film deposited on the inner wall of a reactor can be monitored independently of each other.
申请公布号 JP2001326212(A) 申请公布日期 2001.11.22
申请号 JP20000143961 申请日期 2000.05.16
申请人 HITACHI LTD 发明人 OTSUBO TORU;USUI TAKETO
分类号 C23C16/44;C23C16/52;H01L21/205;H01L21/302;H01L21/3065;(IPC1-7):H01L21/306 主分类号 C23C16/44
代理机构 代理人
主权项
地址