FINGERPRINT RECOGNITION DEVICE WITH REDUCED TFT OCCUPYING AREA IN PIXEL

摘要

PURPOSE: A fingerprint recognition device and a fabricating method thereof are provided to reduce a size occupied by a TFT(Thin Film Transistor) in one pixel by using a source electrode of a switch TFT as a gate electrode of a sensor TFT. CONSTITUTION: The first gate electrode(402) is formed on the first region of a transparent substrate(400). The first drain electrode(410) is formed on the first region of the transparent substrate in which the first gate electrode is insulated. The first gate insulation film(404) is formed on the transparent substrate on which the first gate electrode is formed. The first source electrode(408) is formed on the first gate insulation film corresponding to the first region and the second region. The second gate insulation film(416) is formed on the entire surface of the transparent substrate on which the first drain electrode and the first source electrode are formed. The second gate insulation film has a contact hole in which a part of the second source electrode formed on the second region is exposed. A channel layer(418) is formed to correspond to the second region of the second gate insulation film. The second drain electrode(422) is formed on the first region to correspond to the second region of the transparent substrate, the first drain electrode and the first source electrode. The second source electrode(420) is formed on the second region of the transparent substrate on which the channel layer is formed, and is connected with the first source electrode through the contact hole. A storage capacitor is formed on the transparent substrate on which the second source electrode is formed. The first source electrode is a gate electrode of the second transistor in the second region.