MANUFACTURING METHOD OF NITRIDE SEMICONDUCTOR LIGHT EMITTING DEVICE

摘要

PROBLEM TO BE SOLVED: To provide a manufacturing method of a nitride semiconductor light emitting device.

SOLUTION: The manufacturing method of a nitride semiconductor light emitting device comprises: a process for forming on a substrate a sacrificial layer with wet etching characteristics; a process for promoting epitaxial growth of a semiconductor layer formed on the protection layer which is formed on the sacrificial layer so as to protect the sacrificial layer under the reactive gas atmosphere for crystal growth; a process for forming a semiconductor device containing an n-type semiconductor layer, an active layer, and a p-type semiconductor layer on the protection layer; and a process for separating and removing the substrate from the semiconductor device, by carrying out wet etching of the sacrificial layer.

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