发明名称 Semiconductor Device and Method of Forming 3D Dual Side Die Embedded Build-Up Semiconductor Package
摘要 A semiconductor device has a plurality of semiconductor die. A substrate is provided with bumps disposed over the substrate. A first prefabricated insulating film is disposed between the semiconductor die and substrate. An interconnect structure is formed over the semiconductor die and first prefabricated insulating film. The bumps include a copper core encapsulated within copper plating. The first prefabricated insulating film includes glass cloth, glass fiber, or glass fillers. The substrate includes a conductive layer formed in the substrate and coupled to the bumps. The semiconductor die is disposed between the bumps of the substrate. The bumps and the semiconductor die are embedded within the first prefabricated insulating film. A portion of the first prefabricated insulating film is removed to expose the bumps. The bumps electrically connect the substrate to the interconnect structure.
申请公布号 US2016233168(A1) 申请公布日期 2016.08.11
申请号 US201615130452 申请日期 2016.04.15
申请人 STATS ChipPAC, Ltd. 发明人 Chi HeeJo;Shin HanGil;Cho NamJu
分类号 H01L23/538 主分类号 H01L23/538
代理机构 代理人
主权项 1. A semiconductor device, comprising: a semiconductor die; a bump disposed over a substrate, the bump including a conductive core and a conductive material disposed around the conductive core; a first insulating film disposed between the substrate and a back surface of the semiconductor die; an opening formed in the conductive material; and a redistribution layer (RDL) formed over the first insulating film and contacting the conductive material and conductive core.
地址 Singapore SG