| 摘要 |
PROBLEM TO BE SOLVED: To provide a defect correction method of a template for nanoimprint lithography capable of easily correcting both residue defect and deficiency defect, and to provide a method of manufacturing a template for nanoimprint lithography.SOLUTION: A hard mask pattern is formed by transferring a transfer pattern of a first template to a hard mask layer formed on a substrate constituting a second template, by using a first template having well-known defect position information. Defect of the hard mask pattern is corrected based on the defect position information of a transfer pattern of the first template, and then a transfer pattern of the second template is formed using the hard mask pattern subjected to defect correction as an etching mask. |
