发明名称 SOLID-STATE LASER WITH SPATIALLY-TAILORED ACTIVE ION CONCENTRATION USING VALENCE CONVERSION WITH SURFACE MASKING AND METHOD
摘要 A material having a surface and a dopant in the material distributed whereby the material has a spatially variant optical flux density profile. In accordance with the invention, tailored non-uniform gain profiles within a Yb:YAG laser component (rod, slab, disc, etc.) are achieved by a spatial material modification in the spatially masked pre-forms. High temperature-assisted reduction leads to the coordinate-dependent gain profiles, which are controlled by the topology of the deposited solid masks. The gain profiles are obtained by reducing the charge state of the laser-active trivalent Yb3+ ions into inactive divalent Yb2+ ions. This valence conversion process is driven by mass transport of ions and oxygen vacancies. These processes, in turn, affect the dopant distribution throughout the surface and bulk laser crystal.
申请公布号 EP2011201(A2) 申请公布日期 2009.01.07
申请号 EP20070753744 申请日期 2007.03.22
申请人 RAYTHEON COMPANY 发明人 SUMIDA, DAVID, S.;BYREN, ROBERT W.;USHINSKY, MICHAEL
分类号 H01S3/06;H01S3/16 主分类号 H01S3/06
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