| 摘要 |
PROBLEM TO BE SOLVED: To provide a manufacturing method of a high-temperature-tolerant bonded substrate.SOLUTION: A semiconductor substrate manufacturing method comprises: an aluminum layer formation process of forming on a surface of a support substrate, an aluminum layer having a lower melting point than that of the support substrate; a heating process of heating the support substrate on which the aluminum layer is formed in an oxygen-free atmosphere to a predetermined temperature over the melting point of the aluminum layer; an oxidation process of exposing the support substrate to an oxygen-containing atmosphere in a state where the support substrate is heated to over the melting point of the aluminum layer; and a bonding process of bonding a semiconductor layer formed by a SiC single crystal to a surface of an insulation layer after the oxidation process is performed. The insulation layer after the oxidation process is performed has lower conductivity and a higher melting point compared with the aluminum layer before the oxidation process is performed. |
