发明名称 Type configurable memory methodology for use with metal programmable devices
摘要 A pre-diffused array of core memory cells is provided in a metal programmable device. Multiple control block versions of interface logic are also provided and placed around the memory core. Contact points for each control block are brought to the surface of the wafer using a via. The appropriate interface logic is selected by connecting the metal layer to the appropriate surface contacts to access the core memory cells. The application-specific circuit, including memory configuration and memory interface type, is programmed with the metal layer.
申请公布号 US2005041511(A1) 申请公布日期 2005.02.24
申请号 US20030643463 申请日期 2003.08.19
申请人 BROWN JEFFREY SCOTT 发明人 BROWN JEFFREY SCOTT
分类号 G06F17/50;H01L27/105;H01L27/118;(IPC1-7):G06F17/50 主分类号 G06F17/50
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