发明名称 |
Asymmetric static random access memory device having reduced bit line leakage |
摘要 |
An SRAM device comprising a column having opposing bit lines, asymmetric memory cells spanning the opposing bit lines in alternating orientations, and a sense amplifier. The sense amplifier includes sensing circuitry configured to sense values stored in the cells and switching circuitry configured to apply signals to the sensing circuitry as a function of the orientations.
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申请公布号 |
US2005041449(A1) |
申请公布日期 |
2005.02.24 |
申请号 |
US20030635185 |
申请日期 |
2003.08.06 |
申请人 |
TEXAS INSTRUMENTS INCORPORATED |
发明人 |
HOUSTON THEODORE W. |
分类号 |
G11C11/419;G11C7/06;G11C11/41;G11C11/413;(IPC1-7):G11C19/08 |
主分类号 |
G11C11/419 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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