发明名称 MEMORY SCAN TESTING
摘要 A method is provided for testing a semiconductor device that includes both a digital (310) and analog (320) portion. The digital portion may include a plurality of latch devices (361-364), and the analog portion may include a plurality of memory cells (321) and a plurality of selector devices (325). Each of the plurality of selector devices is electrically coupled to a respective one of the memory cells, is at least indirectly coupled to one of the plurality of latch devices, and is controlled by a selector input (215). A load clock (372) is applied to load a pattern into the plurality of latch devices. The selector input is asserted such that a derivative of the pattern is received by the plurality of selectors and returned to the plurality of latch devices. A system clock (371) is applied to the plurality of latch devices such that the derivative of the pattern is loaded into the plurality of latch devices.
申请公布号 WO2007044286(A3) 申请公布日期 2007.08.30
申请号 WO2006US38354 申请日期 2006.10.03
申请人 TEXAS INSTRUMENTS INCORPORATED;GROSE, WILLIAM, E.;LAMBERT, LONNIE, L.;PITZ, JEANNE, KRAYER;TANAKA, TORU 发明人 GROSE, WILLIAM, E.;LAMBERT, LONNIE, L.;PITZ, JEANNE, KRAYER;TANAKA, TORU
分类号 G01R31/28 主分类号 G01R31/28
代理机构 代理人
主权项
地址